Zilog Single FETs, MOSFETs IXFH20N100P

Description
N-Channel 1000V 20A (Tc) 660W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 1000V 20A (Tc) 660W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFH20N100P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH20N100P-ND
Single FETs, MOSFETs IXFH20N100P-ND
N-Channel 1000V 20A (Tc) 660W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 1000V 20A (Tc) 660W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N100P - 1049390-IXFH20N100P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N100P
1049390-IXFH20N100P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N100P 1049390-IXFH20N100P
Manufacturer: IXYS Win Source Part Number: 1049390-IXFH20N100P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 660W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 126nC @ 10V Max Input Capacitance: 7300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 570 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049390-IXFH20N100P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 660W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 126nC @ 10V
Max Input Capacitance: 7300pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 570 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH20N100P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH20N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH20N100P
MOSFET N-CH 1000V 20A TO247AD

MOSFET N-CH 1000V 20A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20 Amps 1000V 1 Rds

MOSFET 20 Amps 1000V 1 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH20N100P-ND 1049390-IXFH20N100P IXFH20N100P IXFH20N100P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N100P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
V(BR)DSS 1000 volts
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