Zilog Single FETs, MOSFETs IXFH18N60P

Description
N-Channel 600V 18A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
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Description
N-Channel 600V 18A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFH18N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH18N60P-ND
Single FETs, MOSFETs IXFH18N60P-ND
N-Channel 600V 18A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 600V 18A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH18N60P - 1049388-IXFH18N60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH18N60P
1049388-IXFH18N60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH18N60P 1049388-IXFH18N60P
Manufacturer: IXYS Win Source Part Number: 1049388-IXFH18N60P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 5.5V @ 2.5mA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049388-IXFH18N60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 2.5mA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH18N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH18N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH18N60P
MOSFET N-CH 600V 18A TO247AD

MOSFET N-CH 600V 18A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V 18A

MOSFET 600V 18A

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH18N60P-ND 1049388-IXFH18N60P IXFH18N60P IXFH18N60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH18N60P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
V(BR)DSS 600 volts
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