Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH17N80Q IXFH17N80Q

Description
Manufacturer: IXYS Win Source Part Number: 1049386-IXFH17N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049386-IXFH17N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH17N80Q - 1049386-IXFH17N80Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH17N80Q
1049386-IXFH17N80Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH17N80Q 1049386-IXFH17N80Q
Manufacturer: IXYS Win Source Part Number: 1049386-IXFH17N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049386-IXFH17N80Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH17N80Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH17N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH17N80Q
MOSFET N-CH 800V 17A TO247AD

MOSFET N-CH 800V 17A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 17 Amps 800V 0.60 Rds

MOSFET 17 Amps 800V 0.60 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049386-IXFH17N80Q IXFH17N80Q IXFH17N80Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH17N80Q Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 800 volts
PD 400000 milliwatts
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