Zilog Single FETs, MOSFETs IXFH16N90Q

Description
N-Channel 900V 16A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 900V 16A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH16N90Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH16N90Q-ND
Single FETs, MOSFETs IXFH16N90Q-ND
N-Channel 900V 16A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 900V 16A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N90Q - 1049384-IXFH16N90Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N90Q
1049384-IXFH16N90Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N90Q 1049384-IXFH16N90Q
Manufacturer: IXYS Win Source Part Number: 1049384-IXFH16N90Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 650 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049384-IXFH16N90Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 650 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXFH16N90Q - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH16N90Q
Single FETs, MOSFETs IXFH16N90Q
MOSFET N-CH 900V 16A TO247AD

MOSFET N-CH 900V 16A TO247AD

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH16N90Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH16N90Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH16N90Q
MOSFET N-CH 900V 16A TO247AD

MOSFET N-CH 900V 16A TO247AD

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFH16N90Q-ND 1049384-IXFH16N90Q IXFH16N90Q IXFH16N90Q
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N90Q Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3 TO-247; TO-247-3
V(BR)DSS 900 volts 900 volts
PD 360000 milliwatts 360000 milliwatts
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