Manufacturer: IXYS
Win Source Part Number: 1049384-IXFH16N90Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 650 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
N-Channel 900V 16A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 900V 16A TO247AD
MOSFET N-CH 900V 16A TO247AD
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049384-IXFH16N90Q | IXFH16N90Q-ND | IXFH16N90Q | IXFH16N90Q |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N90Q | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 900 volts | 900 volts | ||
| PD | 360000 milliwatts | 360000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
