Littelfuse, Inc. Single FETs, MOSFETs IXFH16N50P3

Description
N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-247AD (IXFH)
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Description
N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFH16N50P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH16N50P3-ND
Single FETs, MOSFETs IXFH16N50P3-ND
N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-247AD (IXFH)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N50P3 - 1049382-IXFH16N50P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N50P3
1049382-IXFH16N50P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N50P3 1049382-IXFH16N50P3
Manufacturer: IXYS Win Source Part Number: 1049382-IXFH16N50P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1515pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049382-IXFH16N50P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 2.5mA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1515pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 30

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Sheung Wan, Hong Kong
MOSFET Polar3 HiPerFET Power MOSFET

MOSFET Polar3 HiPerFET Power MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH16N50P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH16N50P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH16N50P3
MOSFET N-CH 500V 16A TO247AD

MOSFET N-CH 500V 16A TO247AD

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFH16N50P3-ND 1049382-IXFH16N50P3 IXFH16N50P3 IXFH16N50P3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH16N50P3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
V(BR)DSS 500 volts
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