Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N100 IXFH13N100

Description
Manufacturer: IXYS Win Source Part Number: 1049367-IXFH13N100 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 12.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 900 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Description
Manufacturer: IXYS Win Source Part Number: 1049367-IXFH13N100 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 12.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 900 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N100 - 1049367-IXFH13N100 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N100
1049367-IXFH13N100
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N100 1049367-IXFH13N100
Manufacturer: IXYS Win Source Part Number: 1049367-IXFH13N100 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 12.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 900 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049367-IXFH13N100
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 12.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 900 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH13N100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH13N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH13N100
MOSFET N-CH 1000V 12.5A TO247AD

MOSFET N-CH 1000V 12.5A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
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Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049367-IXFH13N100 IXFH13N100 IXFH13N100
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N100 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 1000 volts
PD 300000 milliwatts
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