Manufacturer: IXYS
Win Source Part Number: 1049362-IXFH12N100Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 4mA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET N-CH 1000V 12A TO247AD
MOSFET N-CH 1000V 12A TO247AD
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049362-IXFH12N100Q | IXFH12N100Q | IXFH12N100Q |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100Q | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 1000 volts | 1000 volts | |
| PD | 300000 milliwatts | 300000 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
