Zilog Single FETs, MOSFETs IXFH120N25T

Description
N-Channel 250V 120A (Tc) 890W (Tc) Through Hole TO-247AD (IXFH)
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Description
N-Channel 250V 120A (Tc) 890W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFH120N25T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH120N25T-ND
Single FETs, MOSFETs IXFH120N25T-ND
N-Channel 250V 120A (Tc) 890W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 250V 120A (Tc) 890W (Tc) Through Hole TO-247AD (IXFH)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH120N25T - 777609-IXFH120N25T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH120N25T
777609-IXFH120N25T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH120N25T 777609-IXFH120N25T
Manufacturer: IXYS Win Source Part Number: 777609-IXFH120N25T Series: HiPerFET, TrenchT2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Family Name: IXFH120N25T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 11300pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 890W (Tc) Rds On (Maximum) @ Id, Vgs: 23 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): H5N2514P; H5N2514P-E; Introduction Date: November 17, 2011 Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777609-IXFH120N25T
Series: HiPerFET, TrenchT2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: IXFH120N25T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 11300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 890W (Tc)
Rds On (Maximum) @ Id, Vgs: 23 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): H5N2514P; H5N2514P-E;
Introduction Date: November 17, 2011
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET Trench HiperFETs Power MOSFETs

MOSFET Trench HiperFETs Power MOSFETs

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH120N25T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH120N25T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH120N25T
MOSFET N-CH 250V 120A TO247AD

MOSFET N-CH 250V 120A TO247AD

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFH120N25T-ND 777609-IXFH120N25T IXFH120N25T IXFH120N25T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH120N25T MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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