Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH11N80 IXFH11N80

Manufacturer: IXYS
Win Source Part Number: 1049357-IXFH11N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 4200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 950 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 30

MOSFET N-CH 800V 11A TO247AD Product overview: IXFH11N80 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH11N80 can be used for catalog matching and distributor lookup.