Zilog Single FETs, MOSFETs IXFH10N100P

Description
N-Channel 1000V 10A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 1000V 10A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH10N100P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH10N100P-ND
Single FETs, MOSFETs IXFH10N100P-ND
N-Channel 1000V 10A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 1000V 10A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH10N100P - 1049353-IXFH10N100P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH10N100P
1049353-IXFH10N100P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH10N100P 1049353-IXFH10N100P
Manufacturer: IXYS Win Source Part Number: 1049353-IXFH10N100P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 380W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 3030pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049353-IXFH10N100P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 3030pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXFH10N100P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH10N100P
Single FETs, MOSFETs IXFH10N100P
MOSFET N-CH 1000V 10A TO247AD

MOSFET N-CH 1000V 10A TO247AD

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH10N100P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH10N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH10N100P
MOSFET N-CH 1000V 10A TO247AD

MOSFET N-CH 1000V 10A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 10 Amps 1000V

MOSFET 10 Amps 1000V

Buy Now

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH10N100P-ND 1049353-IXFH10N100P IXFH10N100P IXFH10N100P IXFH10N100P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH10N100P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3 TO-247; TO-247-3
V(BR)DSS 1000 volts 1000 volts
PD 380000 milliwatts 380000 milliwatts
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