Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFH10N100

Description
Manufacturer: IXYS Win Source Part Number: 1324355-IXFH10N100 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-247AD (IXFH) Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 67 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IXFH10N100-NDR Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): Not Applicable
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Description
Manufacturer: IXYS Win Source Part Number: 1324355-IXFH10N100 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-247AD (IXFH) Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 67 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IXFH10N100-NDR Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): Not Applicable
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324355-IXFH10N100 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324355-IXFH10N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324355-IXFH10N100
Manufacturer: IXYS Win Source Part Number: 1324355-IXFH10N100 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-247AD (IXFH) Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 67 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IXFH10N100-NDR Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): Not Applicable

Manufacturer: IXYS
Win Source Part Number: 1324355-IXFH10N100
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247AD (IXFH)
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 67
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IXFH10N100-NDR
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): Not Applicable

Buy Now Datasheet
Single FETs, MOSFETs - IXFH10N100-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH10N100-ND
Single FETs, MOSFETs IXFH10N100-ND
N-Channel 1000V 10A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 1000V 10A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH10N100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH10N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH10N100
MOSFET N-CH 1KV 10A TO-247AD

MOSFET N-CH 1KV 10A TO-247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1KV 10A

MOSFET 1KV 10A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324355-IXFH10N100 IXFH10N100-ND IXFH10N100 IXFH10N100
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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