Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFB82N60P

Description
Manufacturer: IXYS Win Source Part Number: 1324604-IXFB82N60P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 1250W (Tc) Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFB82 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: IXYS Win Source Part Number: 1324604-IXFB82N60P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 1250W (Tc) Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFB82 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324604-IXFB82N60P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324604-IXFB82N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324604-IXFB82N60P
Manufacturer: IXYS Win Source Part Number: 1324604-IXFB82N60P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 1250W (Tc) Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFB82 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324604-IXFB82N60P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 25
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1250W (Tc)
Supplier Device Package: PLUS264™
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-264-3, TO-264AA
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFB82
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFB82N60P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFB82N60P
Single FETs, MOSFETs IXFB82N60P
MOSFET N-CH 600V 82A PLUS264

MOSFET N-CH 600V 82A PLUS264

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFB82N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB82N60P-ND
Single FETs, MOSFETs IXFB82N60P-ND
N-Channel 600V 82A (Tc) 1250W (Tc) Through Hole PLUS264™

N-Channel 600V 82A (Tc) 1250W (Tc) Through Hole PLUS264™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB82N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB82N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB82N60P
MOSFET N-CH 600V 82A PLUS264

MOSFET N-CH 600V 82A PLUS264

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 82 Amps 600V 0.75 Ohm Rds

MOSFET 82 Amps 600V 0.75 Ohm Rds

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324604-IXFB82N60P IXFB82N60P IXFB82N60P-ND IXFB82N60P IXFB82N60P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 1.25E6 milliwatts 1.25E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA Through Hole
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