Manufacturer: IXYS
Win Source Part Number: 1049350-IXFB80N50Q2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 960W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS264
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 8mA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 15000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
N-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™
MOSFET N-CH 500V 80A PLUS264
MOSFET N-CH 500V 80A PLUS264
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049350-IXFB80N50Q2 | IXFB80N50Q2-ND | IXFB80N50Q2 | IXFB80N50Q2 | IXFB80N50Q2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 500 volts | 500 volts | |||
| PD | 960000 milliwatts | 960000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
