Zilog Single FETs, MOSFETs IXFB80N50Q2

Description
MOSFET N-CH 500V 80A PLUS264
Request a Quote Datasheet
Description
MOSFET N-CH 500V 80A PLUS264
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFB80N50Q2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFB80N50Q2
Single FETs, MOSFETs IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264

MOSFET N-CH 500V 80A PLUS264

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFB80N50Q2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB80N50Q2-ND
Single FETs, MOSFETs IXFB80N50Q2-ND
N-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™

N-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2 - 1049350-IXFB80N50Q2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2
1049350-IXFB80N50Q2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2 1049350-IXFB80N50Q2
Manufacturer: IXYS Win Source Part Number: 1049350-IXFB80N50Q2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS264 Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 5.5V @ 8mA Max Gate Charge: 250nC @ 10V Max Input Capacitance: 15000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049350-IXFB80N50Q2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 960W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS264
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 8mA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 15000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB80N50Q2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB80N50Q2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264

MOSFET N-CH 500V 80A PLUS264

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 80 Amps 500V 0.06 Rds

MOSFET 80 Amps 500V 0.06 Rds

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFB80N50Q2 IXFB80N50Q2-ND 1049350-IXFB80N50Q2 IXFB80N50Q2 IXFB80N50Q2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 80000 milliamps
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