Zilog Single FETs, MOSFETs IXFB80N50Q2

Description
N-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™
Request a Quote Datasheet
Description
N-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFB80N50Q2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB80N50Q2-ND
Single FETs, MOSFETs IXFB80N50Q2-ND
N-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™

N-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™

Buy Now Datasheet
Single FETs, MOSFETs - IXFB80N50Q2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFB80N50Q2
Single FETs, MOSFETs IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264

MOSFET N-CH 500V 80A PLUS264

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2 - 1049350-IXFB80N50Q2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2
1049350-IXFB80N50Q2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2 1049350-IXFB80N50Q2
Manufacturer: IXYS Win Source Part Number: 1049350-IXFB80N50Q2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS264 Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 5.5V @ 8mA Max Gate Charge: 250nC @ 10V Max Input Capacitance: 15000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049350-IXFB80N50Q2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 960W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS264
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 8mA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 15000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 80 Amps 500V 0.06 Rds

MOSFET 80 Amps 500V 0.06 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB80N50Q2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB80N50Q2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264

MOSFET N-CH 500V 80A PLUS264

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFB80N50Q2-ND IXFB80N50Q2 1049350-IXFB80N50Q2 IXFB80N50Q2 IXFB80N50Q2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB80N50Q2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-264-3, TO-264AA TO-264-3, TO-264AA SOT3; PLUS264 TO-264-3, TO-264AA
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
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