Littelfuse, Inc. Single FETs, MOSFETs IXFB52N90P

Description
N-Channel 900V 52A (Tc) 1250W (Tc) Through Hole PLUS264™
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Description
N-Channel 900V 52A (Tc) 1250W (Tc) Through Hole PLUS264™
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - IXFB52N90P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB52N90P-ND
Single FETs, MOSFETs IXFB52N90P-ND
N-Channel 900V 52A (Tc) 1250W (Tc) Through Hole PLUS264™

N-Channel 900V 52A (Tc) 1250W (Tc) Through Hole PLUS264™

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324353-IXFB52N90P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324353-IXFB52N90P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324353-IXFB52N90P
Manufacturer: IXYS Win Source Part Number: 1324353-IXFB52N90P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 1250W (Tc) Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 74 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFB52 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324353-IXFB52N90P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 25
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Supplier Device Package: PLUS264™
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-264-3, TO-264AA
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFB52
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

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Sheung Wan, Hong Kong
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds

MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB52N90P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB52N90P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB52N90P
MOSFET N-CH 900V 52A PLUS264

MOSFET N-CH 900V 52A PLUS264

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFB52N90P-ND 1324353-IXFB52N90P IXFB52N90P IXFB52N90P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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