Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFB38N100Q2

Description
Manufacturer: IXYS Win Source Part Number: 1324363-IXFB38N100Q2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFB38 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: IXYS Win Source Part Number: 1324363-IXFB38N100Q2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFB38 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324363-IXFB38N100Q2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324363-IXFB38N100Q2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324363-IXFB38N100Q2
Manufacturer: IXYS Win Source Part Number: 1324363-IXFB38N100Q2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFB38 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324363-IXFB38N100Q2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 25
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 890W (Tc)
Supplier Device Package: PLUS264™
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-264-3, TO-264AA
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFB38
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

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Sheung Wan, Hong Kong
MOSFET 38 Amps 1000V 0.25 Rds

MOSFET 38 Amps 1000V 0.25 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB38N100Q2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB38N100Q2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB38N100Q2
MOSFET N-CH 1000V 38A PLUS264

MOSFET N-CH 1000V 38A PLUS264

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324363-IXFB38N100Q2 IXFB38N100Q2 IXFB38N100Q2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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