Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB30N120P IXFB30N120P

Description
Manufacturer: IXYS Win Source Part Number: 205677-IXFB30N120P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS264 Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 310nC @ 10V Max Input Capacitance: 22500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 205677-IXFB30N120P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS264 Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 310nC @ 10V Max Input Capacitance: 22500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB30N120P - 205677-IXFB30N120P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB30N120P
205677-IXFB30N120P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB30N120P 205677-IXFB30N120P
Manufacturer: IXYS Win Source Part Number: 205677-IXFB30N120P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS264 Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 310nC @ 10V Max Input Capacitance: 22500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205677-IXFB30N120P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS264
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 310nC @ 10V
Max Input Capacitance: 22500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFB30N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB30N120P-ND
Single FETs, MOSFETs IXFB30N120P-ND
N-Channel 1200V 30A (Tc) 1250W (Tc) Through Hole PLUS264™

N-Channel 1200V 30A (Tc) 1250W (Tc) Through Hole PLUS264™

Buy Now Datasheet
Single FETs, MOSFETs - IXFB30N120P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFB30N120P
Single FETs, MOSFETs IXFB30N120P
MOSFET N-CH 1200V 30A PLUS264

MOSFET N-CH 1200V 30A PLUS264

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30 Amps 1200V 0.35 Rds

MOSFET 30 Amps 1200V 0.35 Rds

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB30N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB30N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB30N120P
MOSFET N-CH 1200V 30A PLUS264

MOSFET N-CH 1200V 30A PLUS264

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205677-IXFB30N120P IXFB30N120P-ND IXFB30N120P IXFB30N120P IXFB30N120P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB30N120P Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 1200 volts 1200 volts
PD 1.25E6 milliwatts 1.25E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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