Manufacturer: IXYS
Win Source Part Number: 205677-IXFB30N120P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS264
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 310nC @ 10V
Max Input Capacitance: 22500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
MOSFET N-CH 1200V 30A PLUS264
N-Channel 1200V 30A (Tc) 1250W (Tc) Through Hole PLUS264™
MOSFET N-CH 1200V 30A PLUS264
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205677-IXFB30N120P | IXFB30N120P | IXFB30N120P-ND | IXFB30N120P | IXFB30N120P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB30N120P | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 1200 volts | 1200 volts | |||
| PD | 1.25E6 milliwatts | 1.25E6 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
