Littelfuse, Inc. Single FETs, MOSFETs IXFB210N30P3

Description
N-Channel 300V 210A (Tc) 1890W (Tc) Through Hole PLUS264™
Request a Quote Datasheet
Description
N-Channel 300V 210A (Tc) 1890W (Tc) Through Hole PLUS264™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXFB210N30P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFB210N30P3-ND
Single FETs, MOSFETs 238-IXFB210N30P3-ND
N-Channel 300V 210A (Tc) 1890W (Tc) Through Hole PLUS264™

N-Channel 300V 210A (Tc) 1890W (Tc) Through Hole PLUS264™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1338045-IXFB210N30P3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1338045-IXFB210N30P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1338045-IXFB210N30P3
Win Source Part Number: 1338045-IXFB210N30P3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: HiPerFET™, Polar3™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 300 V Power Dissipation (Max): 1890W (Tc) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: PLUS264™ Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFB210 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V

Win Source Part Number: 1338045-IXFB210N30P3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: HiPerFET™, Polar3™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 300 V
Power Dissipation (Max): 1890W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: PLUS264™
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFB210
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - IXFB210N30P3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFB210N30P3
Single FETs, MOSFETs IXFB210N30P3
MOSFET N-CH 300V 210A PLUS264

MOSFET N-CH 300V 210A PLUS264

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB210N30P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB210N30P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB210N30P3
MOSFET N-CH 300V 210A PLUS264

MOSFET N-CH 300V 210A PLUS264

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Channel: Power MOSFET w/Fast Diode

MOSFET N-Channel: Power MOSFET w/Fast Diode

Buy Now

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXFB210N30P3-ND 1338045-IXFB210N30P3 IXFB210N30P3 IXFB210N30P3 IXFB210N30P3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-264-3, TO-264AA SOT3 TO-264-3, TO-264AA TO-264-3, TO-264AA
PD 1.89E6 milliwatts 1.89E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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