N-Channel 650V 150A (Tc) 1560W (Tc) Through Hole PLUS264™
Win Source Part Number: 1216723-IXFB150N65X2
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Ultra X2
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 1560W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: PLUS264™
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFB150N65X2X,IXFB15
Base Product Number: IXFB150
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 150A PLUS264
MOSFET MOSFET 650V/150A Ultra Junction X2
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFB150N65X2-ND | 1216723-IXFB150N65X2 | IXFB150N65X2 | IXFB150N65X2 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
