Littelfuse, Inc. Single FETs, MOSFETs IXFB150N65X2

Description
N-Channel 650V 150A (Tc) 1560W (Tc) Through Hole PLUS264™
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Description
N-Channel 650V 150A (Tc) 1560W (Tc) Through Hole PLUS264™
Request a Quote Datasheet

Suppliers

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Single FETs, MOSFETs - IXFB150N65X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB150N65X2-ND
Single FETs, MOSFETs IXFB150N65X2-ND
N-Channel 650V 150A (Tc) 1560W (Tc) Through Hole PLUS264™

N-Channel 650V 150A (Tc) 1560W (Tc) Through Hole PLUS264™

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1216723-IXFB150N65X2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1216723-IXFB150N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1216723-IXFB150N65X2
Win Source Part Number: 1216723-IXFB150N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Ultra X2 Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Power Dissipation (Max): 1560W (Tc) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: PLUS264™ Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFB150N65X2X,IXFB15 0N65X2X-ND,IXFB150N6 5X2XINACTIVE Base Product Number: IXFB150 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1216723-IXFB150N65X2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Ultra X2
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 1560W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: PLUS264™
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFB150N65X2X,IXFB150N65X2X-ND,IXFB150N65X2XINACTIVE
Base Product Number: IXFB150
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET MOSFET 650V/150A Ultra Junction X2

MOSFET MOSFET 650V/150A Ultra Junction X2

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB150N65X2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB150N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB150N65X2
MOSFET N-CH 650V 150A PLUS264

MOSFET N-CH 650V 150A PLUS264

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFB150N65X2-ND 1216723-IXFB150N65X2 IXFB150N65X2 IXFB150N65X2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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