Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 IXFA7N60P3

Description
Manufacturer: IXYS Win Source Part Number: 766229-IXFA7N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: IXFA7N60P3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 180W (Tc) Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4; Introduction Date: November 19, 2013 ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: IXYS Win Source Part Number: 766229-IXFA7N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: IXFA7N60P3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 180W (Tc) Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4; Introduction Date: November 19, 2013 ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 50
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 - 766229-IXFA7N60P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3
766229-IXFA7N60P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 766229-IXFA7N60P3
Manufacturer: IXYS Win Source Part Number: 766229-IXFA7N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: IXFA7N60P3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 180W (Tc) Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4; Introduction Date: November 19, 2013 ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 766229-IXFA7N60P3
Series: HiPerFET, Polar3
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: IXFA7N60P3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXFA)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 180W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V
Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4;
Introduction Date: November 19, 2013
ECCN: EAR99
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 50

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Sheung Wan, Hong Kong
MOSFET 600V 7A

MOSFET 600V 7A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA7N60P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA7N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA7N60P3
MOSFET N-CH 600V 7A TO263

MOSFET N-CH 600V 7A TO263

Supplier's Site
MOSFET N-CH 600V 7A TO-263AA - 401-IXFA7N60P3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 7A TO-263AA
401-IXFA7N60P3
MOSFET N-CH 600V 7A TO-263AA 401-IXFA7N60P3
MOSFET N-CH 600V 7A TO-263AA

MOSFET N-CH 600V 7A TO-263AA

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 766229-IXFA7N60P3 IXFA7N60P3 IXFA7N60P3 401-IXFA7N60P3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 600V 7A TO-263AA
PD 180000 milliwatts 180000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 705 pF @ 25 V
Packing Method Tube; Tube Tube; Tube Tube; Tube
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