Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 IXFA7N60P3

Description
Manufacturer: IXYS Win Source Part Number: 766229-IXFA7N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: IXFA7N60P3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 180W (Tc) Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4; Introduction Date: November 19, 2013 ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: IXYS Win Source Part Number: 766229-IXFA7N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: IXFA7N60P3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 180W (Tc) Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4; Introduction Date: November 19, 2013 ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 50
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 - 766229-IXFA7N60P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3
766229-IXFA7N60P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 766229-IXFA7N60P3
Manufacturer: IXYS Win Source Part Number: 766229-IXFA7N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: IXFA7N60P3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 180W (Tc) Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4; Introduction Date: November 19, 2013 ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 766229-IXFA7N60P3
Series: HiPerFET, Polar3
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: IXFA7N60P3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXFA)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 13.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 705pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 180W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.15 Ohm @ 3.5A, 10V
Alternative Parts (Cross-Reference): STB7NB60T4; STB7NB60; STB6NA60T4;
Introduction Date: November 19, 2013
ECCN: EAR99
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA7N60P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA7N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA7N60P3
MOSFET N-CH 600V 7A TO263

MOSFET N-CH 600V 7A TO263

Supplier's Site
MOSFET N-CH 600V 7A TO-263AA - 401-IXFA7N60P3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 7A TO-263AA
401-IXFA7N60P3
MOSFET N-CH 600V 7A TO-263AA 401-IXFA7N60P3
MOSFET N-CH 600V 7A TO-263AA

MOSFET N-CH 600V 7A TO-263AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V 7A

MOSFET 600V 7A

Buy Now

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 766229-IXFA7N60P3 IXFA7N60P3 401-IXFA7N60P3 IXFA7N60P3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N60P3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 600V 7A TO-263AA MOSFET
PD 180000 milliwatts 180000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 705 pF @ 25 V
Packing Method Tube; Tube Tube; Tube Tube; Tube
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