Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P IXFA7N100P

Description
Manufacturer: IXYS Win Source Part Number: 205675-IXFA7N100P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXFA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 6V @ 1mA Max Gate Charge: 47nC @ 10V Max Input Capacitance: 2590pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P - 205675-IXFA7N100P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFA7N100P-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IXFA7N100P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET N-CH 1000V 7A D2PAK - 401-IXFA7N100P - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA7N100P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205675-IXFA7N100P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXFA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 6V @ 1mA Max Gate Charge: 47nC @ 10V Max Input Capacitance: 2590pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P - 205675-IXFA7N100P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P
205675-IXFA7N100P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P 205675-IXFA7N100P
Manufacturer: IXYS Win Source Part Number: 205675-IXFA7N100P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXFA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 6V @ 1mA Max Gate Charge: 47nC @ 10V Max Input Capacitance: 2590pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 205675-IXFA7N100P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXFA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 6V @ 1mA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 2590pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXFA7N100P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA7N100P-ND
Single FETs, MOSFETs IXFA7N100P-ND
N-Channel 1000V 7A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 1000V 7A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
Single FETs, MOSFETs - IXFA7N100P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFA7N100P
Single FETs, MOSFETs IXFA7N100P
MOSFET N-CH 1000V 7A TO263

MOSFET N-CH 1000V 7A TO263

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFA7N100P
MOSFET IXFA7N100P
MOSFET 7 Amps 1000V

MOSFET 7 Amps 1000V

Buy Now
MOSFET N-CH 1000V 7A D2PAK - 401-IXFA7N100P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1000V 7A D2PAK
401-IXFA7N100P
MOSFET N-CH 1000V 7A D2PAK 401-IXFA7N100P
MOSFET N-CH 1000V 7A D2PAK

MOSFET N-CH 1000V 7A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA7N100P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA7N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA7N100P
MOSFET N-CH 1000V 7A TO263

MOSFET N-CH 1000V 7A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205675-IXFA7N100P IXFA7N100P-ND IXFA7N100P IXFA7N100P 401-IXFA7N100P IXFA7N100P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P Single FETs, MOSFETs Single FETs, MOSFETs MOSFET MOSFET N-CH 1000V 7A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 1000 volts 1000 volts 1000 volts
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; TO-263 (IXFA) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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