Zilog Single FETs, MOSFETs IXFA7N100P

Description
N-Channel 1000V 7A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)
  • Single FETs, MOSFETs - IXFA7N100P-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P - 205675-IXFA7N100P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFA7N100P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA7N100P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 1000V 7A D2PAK - 401-IXFA7N100P - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
N-Channel 1000V 7A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFA7N100P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA7N100P-ND
Single FETs, MOSFETs IXFA7N100P-ND
N-Channel 1000V 7A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 1000V 7A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P - 205675-IXFA7N100P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P
205675-IXFA7N100P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P 205675-IXFA7N100P
Manufacturer: IXYS Win Source Part Number: 205675-IXFA7N100P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXFA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 6V @ 1mA Max Gate Charge: 47nC @ 10V Max Input Capacitance: 2590pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 205675-IXFA7N100P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXFA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 6V @ 1mA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 2590pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXFA7N100P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFA7N100P
Single FETs, MOSFETs IXFA7N100P
MOSFET N-CH 1000V 7A TO263

MOSFET N-CH 1000V 7A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA7N100P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA7N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA7N100P
MOSFET N-CH 1000V 7A TO263

MOSFET N-CH 1000V 7A TO263

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFA7N100P
MOSFET IXFA7N100P
MOSFET 7 Amps 1000V

MOSFET 7 Amps 1000V

Buy Now
MOSFET N-CH 1000V 7A D2PAK - 401-IXFA7N100P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1000V 7A D2PAK
401-IXFA7N100P
MOSFET N-CH 1000V 7A D2PAK 401-IXFA7N100P
MOSFET N-CH 1000V 7A D2PAK

MOSFET N-CH 1000V 7A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA7N100P-ND 205675-IXFA7N100P IXFA7N100P IXFA7N100P IXFA7N100P 401-IXFA7N100P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA7N100P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 1000V 7A D2PAK
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (IXFA) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 1000 volts 1000 volts 1000 volts
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data