Zilog Single FETs, MOSFETs IXFA6N120P

Description
N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA)
Request a Quote Datasheet
Description
N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFA6N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA6N120P-ND
Single FETs, MOSFETs IXFA6N120P-ND
N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1015934-IXFA6N120P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1015934-IXFA6N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1015934-IXFA6N120P
Win Source Part Number: 1015934-IXFA6N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 250W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXFA) Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFA6N120P-CRL,Q1317 6188 Base Product Number: IXFA6N120 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1015934-IXFA6N120P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXFA)
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFA6N120P-CRL,Q13176188
Base Product Number: IXFA6N120
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IXFA6N120P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFA6N120P
Single FETs, MOSFETs IXFA6N120P
MOSFET N-CH 1200V 6A TO263

MOSFET N-CH 1200V 6A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA6N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA6N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA6N120P
MOSFET N-CH 1200V 6A TO263

MOSFET N-CH 1200V 6A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA6N120P-ND 1015934-IXFA6N120P IXFA6N120P IXFA6N120P IXFA6N120P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 250000 milliwatts 250000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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