Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFA6N120P

Description
Win Source Part Number: 1015934-IXFA6N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 250W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXFA) Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFA6N120P-CRL,Q1317 6188 Base Product Number: IXFA6N120 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1015934-IXFA6N120P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFA6N120P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXFA6N120P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA6N120P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1015934-IXFA6N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 250W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXFA) Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFA6N120P-CRL,Q1317 6188 Base Product Number: IXFA6N120 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1015934-IXFA6N120P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1015934-IXFA6N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1015934-IXFA6N120P
Win Source Part Number: 1015934-IXFA6N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 250W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXFA) Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFA6N120P-CRL,Q1317 6188 Base Product Number: IXFA6N120 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1015934-IXFA6N120P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXFA)
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFA6N120P-CRL,Q13176188
Base Product Number: IXFA6N120
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IXFA6N120P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFA6N120P
Single FETs, MOSFETs IXFA6N120P
MOSFET N-CH 1200V 6A TO263

MOSFET N-CH 1200V 6A TO263

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFA6N120P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA6N120P-ND
Single FETs, MOSFETs IXFA6N120P-ND
N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFA6N120P
MOSFET IXFA6N120P
MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA6N120P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA6N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA6N120P
MOSFET N-CH 1200V 6A TO263

MOSFET N-CH 1200V 6A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1015934-IXFA6N120P IXFA6N120P IXFA6N120P-ND IXFA6N120P IXFA6N120P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 250000 milliwatts 250000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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