Littelfuse, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFA22N65X2

Description
Win Source Part Number: 1155508-IXFA22N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Ultra X2 Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Power Dissipation (Max): 390W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFA22N65X2X,IXFA22N 65X2XINACTIVE,IXFA22 N65X2X-ND Base Product Number: IXFA22 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1155508-IXFA22N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Ultra X2 Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Power Dissipation (Max): 390W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFA22N65X2X,IXFA22N 65X2XINACTIVE,IXFA22 N65X2X-ND Base Product Number: IXFA22 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1155508-IXFA22N65X2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1155508-IXFA22N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1155508-IXFA22N65X2
Win Source Part Number: 1155508-IXFA22N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Ultra X2 Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Power Dissipation (Max): 390W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFA22N65X2X,IXFA22N 65X2XINACTIVE,IXFA22 N65X2X-ND Base Product Number: IXFA22 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1155508-IXFA22N65X2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Ultra X2
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Power Dissipation (Max): 390W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFA22N65X2X,IXFA22N65X2XINACTIVE,IXFA22N65X2X-ND
Base Product Number: IXFA22
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFA22N65X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFA22N65X2-ND
Single FETs, MOSFETs 238-IXFA22N65X2-ND
N-Channel 650V 22A (Tc) 390W (Tc) Surface Mount TO-263HV

N-Channel 650V 22A (Tc) 390W (Tc) Surface Mount TO-263HV

Buy Now Datasheet
Single FETs, MOSFETs - IXFA22N65X2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFA22N65X2
Single FETs, MOSFETs IXFA22N65X2
MOSFET N-CH 650V 22A TO263

MOSFET N-CH 650V 22A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA22N65X2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA22N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA22N65X2
MOSFET N-CH 650V 22A TO263

MOSFET N-CH 650V 22A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET 650V/22A Ultra Junction X2

MOSFET MOSFET 650V/22A Ultra Junction X2

Buy Now

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1155508-IXFA22N65X2 238-IXFA22N65X2-ND IXFA22N65X2 IXFA22N65X2 IXFA22N65X2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 390000 milliwatts 390000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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