Zilog Single FETs, MOSFETs IXFA180N10T2

Description
N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount TO-263 (IXFA)
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Description
N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount TO-263 (IXFA)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - IXFA180N10T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA180N10T2-ND
Single FETs, MOSFETs IXFA180N10T2-ND
N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA180N10T2 - 1049344-IXFA180N10T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA180N10T2
1049344-IXFA180N10T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA180N10T2 1049344-IXFA180N10T2
Manufacturer: IXYS Win Source Part Number: 1049344-IXFA180N10T2 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (IXFA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 10500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049344-IXFA180N10T2
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 480W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (IXFA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 10500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Trench T2 HiperFET Power MOSFET

MOSFET Trench T2 HiperFET Power MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA180N10T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA180N10T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA180N10T2
MOSFET N-CH 100V 180A TO263

MOSFET N-CH 100V 180A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFA180N10T2-ND 1049344-IXFA180N10T2 IXFA180N10T2 IXFA180N10T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA180N10T2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (IXFA) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts
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