Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA14N60P3 IXFA14N60P3

Description
Manufacturer: IXYS Win Source Part Number: 777607-IXFA14N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Family Name: IXDN609 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1480pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 327W (Tc) Rds On (Maximum) @ Id, Vgs: 540 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): IXDN609SIATR; XDN609SIA; Introduction Date: April 12, 2010 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: IXYS Win Source Part Number: 777607-IXFA14N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Family Name: IXDN609 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1480pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 327W (Tc) Rds On (Maximum) @ Id, Vgs: 540 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): IXDN609SIATR; XDN609SIA; Introduction Date: April 12, 2010 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 50
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA14N60P3 - 777607-IXFA14N60P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA14N60P3
777607-IXFA14N60P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA14N60P3 777607-IXFA14N60P3
Manufacturer: IXYS Win Source Part Number: 777607-IXFA14N60P3 Series: HiPerFET, Polar3 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Family Name: IXDN609 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1480pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 327W (Tc) Rds On (Maximum) @ Id, Vgs: 540 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): IXDN609SIATR; XDN609SIA; Introduction Date: April 12, 2010 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 777607-IXFA14N60P3
Series: HiPerFET, Polar3
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Family Name: IXDN609
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXFA)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1480pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 327W (Tc)
Rds On (Maximum) @ Id, Vgs: 540 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): IXDN609SIATR; XDN609SIA;
Introduction Date: April 12, 2010
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 50

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Sheung Wan, Hong Kong
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA14N60P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
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IXFA14N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA14N60P3
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 777607-IXFA14N60P3 IXFA14N60P3 IXFA14N60P3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA14N60P3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 327000 milliwatts
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