Zilog Single FETs, MOSFETs IXFA10N80P

Description
N-Channel 800V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)
Request a Quote Datasheet
Description
N-Channel 800V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXFA10N80P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA10N80P-ND
Single FETs, MOSFETs IXFA10N80P-ND
N-Channel 800V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 800V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 997654-IXFA10N80P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
997654-IXFA10N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 997654-IXFA10N80P
Win Source Part Number: 997654-IXFA10N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 300W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXFA) Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: -IXFA10N80P Base Product Number: IXFA10 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 997654-IXFA10N80P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Power Dissipation (Max): 300W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXFA)
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXFA10N80P
Base Product Number: IXFA10
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 10 Amps 800V 1.1 Rds

MOSFET 10 Amps 800V 1.1 Rds

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IXYS SEMICONDUCTOR - IXFA10N80P - MOSFET, N, TO-263 - 401-IXFA10N80P - Utmel Electronic Limited
Hong Kong, China
IXYS SEMICONDUCTOR - IXFA10N80P - MOSFET, N, TO-263
401-IXFA10N80P
IXYS SEMICONDUCTOR - IXFA10N80P - MOSFET, N, TO-263 401-IXFA10N80P
IXYS SEMICONDUCTOR - IXFA10N80P - MOSFET, N, TO-263

IXYS SEMICONDUCTOR - IXFA10N80P - MOSFET, N, TO-263

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA10N80P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA10N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA10N80P
MOSFET N-CH 800V 10A TO263

MOSFET N-CH 800V 10A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFA10N80P-ND 997654-IXFA10N80P IXFA10N80P 401-IXFA10N80P IXFA10N80P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET IXYS SEMICONDUCTOR - IXFA10N80P - MOSFET, N, TO-263 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material SILICON
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