Zilog Single FETs, MOSFETs IXFA10N60P

Description
N-Channel 600V 10A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA)
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Description
N-Channel 600V 10A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - IXFA10N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA10N60P-ND
Single FETs, MOSFETs IXFA10N60P-ND
N-Channel 600V 10A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 600V 10A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1007382-IXFA10N60P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1007382-IXFA10N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1007382-IXFA10N60P
Win Source Part Number: 1007382-IXFA10N60P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 200W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXFA) Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFA10 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1007382-IXFA10N60P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 200W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXFA)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFA10
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET 600V 10A

MOSFET 600V 10A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA10N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA10N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA10N60P
MOSFET N-CH 600V 10A TO263

MOSFET N-CH 600V 10A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFA10N60P-ND 1007382-IXFA10N60P IXFA10N60P IXFA10N60P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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