Zilog Single FETs, MOSFETs IRFP250

Description
N-Channel 200V 30A (Tc) 190W (Tc) Through Hole TO-247AD
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Description
N-Channel 200V 30A (Tc) 190W (Tc) Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFP250-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP250-ND
Single FETs, MOSFETs IRFP250-ND
N-Channel 200V 30A (Tc) 190W (Tc) Through Hole TO-247AD

N-Channel 200V 30A (Tc) 190W (Tc) Through Hole TO-247AD

Buy Now Datasheet
FETs - Single - IRFP250 - 1187771-IRFP250 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFP250
1187771-IRFP250
FETs - Single - IRFP250 1187771-IRFP250
Manufacturer: IXYS Win Source Part Number: 1187771-IRFP250 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial, Portable Devices, Consumer Electronics Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 30A Rds On (Maximum) at Id, Vgs: 85mOhm at 18A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2970pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1187771-IRFP250
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial, Portable Devices, Consumer Electronics
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 30A
Rds On (Maximum) at Id, Vgs: 85mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2970pF at 25V

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFP250-ND 1187771-IRFP250
Product Name Single FETs, MOSFETs FETs - Single - IRFP250
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3
V(BR)DSS 200 volts
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