The H11G1 is an optically coupled isolator featuring an infrared LED and a high-voltage NPN silicon photo Darlington transistor in a 6-pin dual in-line plastic package. It provides 5.3 kV RMS and 7.5 kV peak isolation voltage, with a collector-emitter breakdown voltage minimum of 100 V and a current transfer ratio of at least 1000% at 10 mA input current and 1.2 V collector-emitter voltage. The device operates from -25°C to +100°C and sustains a maximum power dissipation of 350 mW. The input forward voltage is 1.5 V at 10 mA, and the collector dark current is 100 nA at 80 V. It is UL recognized and meets VDE 0884 standards for the X specification variant.
6PIN DARLINGTON OUTPUT, HIGH VOL Product overview: H11G1 from Isocom Components is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11G1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11G1 |
| Product Name | Bipolar Transistor |
| Package Type | Tube |
| Packing Method | Tube |
| IC(max) | 150000 milliamps |
