The U257 is a matched dual N-channel silicon junction field-effect transistor designed for wideband differential amplifiers. It is housed in an SOIC-8 package with dimensions defined in inches and millimeters. The device has a maximum reverse gate-source and gate-drain voltage of -25 V, a continuous forward gate current of 50 mA, and a continuous power dissipation of 300 mW, derating at 4 mW/°C. It operates over a temperature range from -55°C to +125°C and has a storage temperature range of -65°C to +150°C. Key matching characteristics include a differential gate-source voltage of up to 100 mV and a drain saturation current ratio between devices of 0.85 to 1. The part meets AEC-Q200 and RoHS standards.
JFET Dual JFET N-Ch -25V 50mA 250mW 3.8mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | U257 |
| Product Name | JFET |
| Transistor Type | JFET |
