InterFET Corporation JFET SMPJ271

SMPJ271 is a P-channel silicon junction field-effect transistor designed for analog switch, sample and hold, and low noise high gain amplifier applications. It is housed in a standard package with a continuous device power dissipation of 360 mW and a power derating of 2.8 mW/°C. The device has a gate-source breakdown voltage of -30 V, a continuous forward gate current of 50 mA, and a gate-source cutoff voltage range of 0.5 V to 4.5 V. Drain saturation current varies from -2 mA to -50 mA under specified conditions. Input capacitance is 32 pF and reverse transfer capacitance is 4 pF at 1 MHz. The typical equivalent short circuit input noise voltage is 6 nV/√Hz at 1 kHz. Transconductance ranges from 6 mS to 18 mS.