InterFET Corporation JFET SMP5020A

Description
JFET 25Vbr 1nA 1.5Vgs 50mA 500mW -40V
Description
JFET 25Vbr 1nA 1.5Vgs 50mA 500mW -40V
Datasheet
Datasheet Summary
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SMP5020A is a P-channel silicon junction field-effect transistor in a TO-18 surface-mount package. It has a reverse gate-source and gate-drain voltage rating of 50 V, a continuous forward gate current of 50 mA, and a power dissipation of 500 mW with a derating of 4 mW/°C. The gate-source breakdown voltage is 25 V at 1 µA, and the gate reverse current is 1 nA at 15 V. The gate-source cutoff voltage ranges from 0.3 V to 1.5 V, and the drain saturation current ranges from -0.3 mA to -1.2 mA. The forward transconductance is 1 to 3.5 mS, input capacitance is 25 pF, and reverse transfer capacitance is 7 pF, all measured at -15 V drain-source voltage and 1 MHz frequency. The storage temperature range is -65°C to +200°C.

Datasheet Summary
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SMP5020A is a P-channel silicon junction field-effect transistor in a TO-18 surface-mount package. It has a reverse gate-source and gate-drain voltage rating of 50 V, a continuous forward gate current of 50 mA, and a power dissipation of 500 mW with a derating of 4 mW/°C. The gate-source breakdown voltage is 25 V at 1 µA, and the gate reverse current is 1 nA at 15 V. The gate-source cutoff voltage ranges from 0.3 V to 1.5 V, and the drain saturation current ranges from -0.3 mA to -1.2 mA. The forward transconductance is 1 to 3.5 mS, input capacitance is 25 pF, and reverse transfer capacitance is 7 pF, all measured at -15 V drain-source voltage and 1 MHz frequency. The storage temperature range is -65°C to +200°C.

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Sheung Wan, Hong Kong
JFET 25Vbr 1nA 1.5Vgs 50mA 500mW -40V

JFET 25Vbr 1nA 1.5Vgs 50mA 500mW -40V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number SMP5020A
Product Name JFET
Transistor Type JFET
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