InterFET Corporation JFET IFN403

Description
JFET JFET N-Channel Dual
Description
JFET JFET N-Channel Dual
Datasheet
Datasheet Summary
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The IFN403 is an N-channel matched dual silicon junction field-effect transistor designed for low-noise differential and precision instrumentation amplifier applications. It is housed in an SOIC-8 package and operates over a temperature range of -55°C to +125°C with a maximum power dissipation of 300 mW and a power derating of 4.3 mW/°C. The device has a gate-source breakdown voltage of -50 V and a continuous forward gate current of 10 mA. Matching characteristics include a maximum differential gate-source voltage of 10 mV at 200 μA drain current, with a temperature coefficient of 25 μV/°C between -55°C and +125°C. It meets the AEC-Q200 qualification standard.

Datasheet Summary
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The IFN403 is an N-channel matched dual silicon junction field-effect transistor designed for low-noise differential and precision instrumentation amplifier applications. It is housed in an SOIC-8 package and operates over a temperature range of -55°C to +125°C with a maximum power dissipation of 300 mW and a power derating of 4.3 mW/°C. The device has a gate-source breakdown voltage of -50 V and a continuous forward gate current of 10 mA. Matching characteristics include a maximum differential gate-source voltage of 10 mV at 200 μA drain current, with a temperature coefficient of 25 μV/°C between -55°C and +125°C. It meets the AEC-Q200 qualification standard.

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Sheung Wan, Hong Kong
JFET JFET N-Channel Dual

JFET JFET N-Channel Dual

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number IFN403
Product Name JFET
Transistor Type JFET
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