InterFET Corporation JFET IFN402

The IFN402 is an N-channel matched dual silicon junction field-effect transistor housed in an SOIC-8 package, designed for low-noise differential and precision instrumentation amplifier applications. It shares with its series the absolute maximum reverse gate-source and gate-drain voltage of -50 V, continuous forward gate current of 10 mA, and power dissipation of 300 mW with a derating of 4.3 mW/°C. The operating temperature range extends from -55°C to +125°C, and the gate-source cutoff voltage ranges from -0.5 V to -2.5 V at 15 V drain-source voltage and 1 nA drain current. Matching characteristics include a differential gate-source voltage of ≤10 mV at 10 V drain-source voltage and 200 μA drain current, with a temperature coefficient of ≤10 μV/°C between -55°C and +125°C.