InterFET Corporation JFET 2N3972

Description
JFET JFET N-Channel -40V 50mA 300mW 1.7mW
Description
JFET JFET N-Channel -40V 50mA 300mW 1.7mW
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The 2N3972 is an N-channel silicon junction field-effect transistor designed for low rds(on) switching applications. It is packaged in a standard case style with a maximum drain-source voltage of -40 V, a continuous forward gate current of 50 mA, and a power dissipation of 300 mW at 25°C, derating at 1.7 mW/°C. The gate-source cutoff voltage ranges from -0.5 V to -3 V, and the drain saturation current under pulse conditions is between 5 mA and 30 mA. The drain-source on resistance is specified from 60 Ω to 100 Ω at Vgs = 0 V and Vds = 0 V. The device operates within a storage temperature range of -65°C to +150°C.

Datasheet Summary
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The 2N3972 is an N-channel silicon junction field-effect transistor designed for low rds(on) switching applications. It is packaged in a standard case style with a maximum drain-source voltage of -40 V, a continuous forward gate current of 50 mA, and a power dissipation of 300 mW at 25°C, derating at 1.7 mW/°C. The gate-source cutoff voltage ranges from -0.5 V to -3 V, and the drain saturation current under pulse conditions is between 5 mA and 30 mA. The drain-source on resistance is specified from 60 Ω to 100 Ω at Vgs = 0 V and Vds = 0 V. The device operates within a storage temperature range of -65°C to +150°C.

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Sheung Wan, Hong Kong
JFET JFET N-Channel -40V 50mA 300mW 1.7mW

JFET JFET N-Channel -40V 50mA 300mW 1.7mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number 2N3972
Product Name JFET
Transistor Type JFET
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