Intel Corporation Memory PA28F008SA85

Description
FLASH Memory IC 8Mbit Parallel 85 ns
Datasheet
Description
FLASH Memory IC 8Mbit Parallel 85 ns
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - PA28F008SA85 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 8Mbit Parallel 85 ns

FLASH Memory IC 8Mbit Parallel 85 ns

Buy Now Datasheet
Memory - PA28F008SA85 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 8Mbit Parallel 85 ns

FLASH Memory IC 8Mbit Parallel 85 ns

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PA28F008SA85
Integrated Circuits (ICs) - Memory - Memory PA28F008SA85
IC FLASH 8MBIT 85NS 44PSOP

IC FLASH 8MBIT 85NS 44PSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number PA28F008SA85 PA28F008SA85
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 85 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 8000 kbits 8000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
CD54HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD54HC40105F3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP
View Details
3 suppliers
Memory - QMP29GL512P10TFIR20D - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Density 512000 kbits
View Details
2 suppliers
SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details