Intel Corporation Memory MD27C25635

Description
EPROM - UV Memory IC 256Kbit Parallel 350 ns 28-CDIP
Datasheet
Description
EPROM - UV Memory IC 256Kbit Parallel 350 ns 28-CDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MD27C25635 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - UV Memory IC 256Kbit Parallel 350 ns 28-CDIP

EPROM - UV Memory IC 256Kbit Parallel 350 ns 28-CDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MD27C25635 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MD27C25635
Integrated Circuits (ICs) - Memory - Memory MD27C25635
IC EPROM 256KBIT PARALLEL 28CDIP

IC EPROM 256KBIT PARALLEL 28CDIP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number MD27C25635 MD27C25635
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EPROM; EPROM EPROM; Non-Volatile
Access Time 350 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - MYXxxSMSxxxxPxxxxx-xx/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 7164L20YGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
SN54ABT7819 512 x 18 x 2 Synchronous Bidirectional FIFO Memory - 5962-9470401QXA - Texas Instruments
Specs
Memory Category FIFO
Package Type CPGA
View Details
3 suppliers