Intel Corporation Memory IC and Storage Component GE28F320B3BC90

Description
Flash, 2MX16, 90ns, PBGA48, VFBGA-48 Product overview: GE28F320B3BC90 from Intel is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory IC Chips. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2020-GE28F320B3BC90 can be used for catalog matching and distributor lookup.
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Description
Flash, 2MX16, 90ns, PBGA48, VFBGA-48 Product overview: GE28F320B3BC90 from Intel is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory IC Chips. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2020-GE28F320B3BC90 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The GE28F320B3BC90 is a 32 Mbit Flash Memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates within a voltage range of 2.7 V to 3.6 V for read, program, and erase operations, and features a fast access time of 70 ns maximum. The device supports flexible I/O options, allowing for either 1.65 V to 1.5 V or 2.7 V to 3.6 V operation, which can help reduce overall system power consumption. This memory device is organized into optimized block sizes, including eight 8-KB blocks for data and up to 127 x 64-KB blocks for code, facilitating efficient data management. It includes features such as block locking controlled by a write protect pin, and it supports automated programming and block erase with status registers. The GE28F320B3BC90 is also designed for low power consumption, with a typical read current of 9 mA. The device is suitable for extended temperature operation, ranging from -40 ¬8C to +85 ¬8C, making it versatile for various environmental conditions. It is available in standard surface mount packaging options, including 48-ball CSP and 48-lead TSOP packages. With a minimum of 100,000 block erase cycles, this Flash Memory device is a reliable choice for applications requiring durability and performance.

Datasheet Summary
Powered by GS/AI

The GE28F320B3BC90 is a 32 Mbit Flash Memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates within a voltage range of 2.7 V to 3.6 V for read, program, and erase operations, and features a fast access time of 70 ns maximum. The device supports flexible I/O options, allowing for either 1.65 V to 1.5 V or 2.7 V to 3.6 V operation, which can help reduce overall system power consumption. This memory device is organized into optimized block sizes, including eight 8-KB blocks for data and up to 127 x 64-KB blocks for code, facilitating efficient data management. It includes features such as block locking controlled by a write protect pin, and it supports automated programming and block erase with status registers. The GE28F320B3BC90 is also designed for low power consumption, with a typical read current of 9 mA. The device is suitable for extended temperature operation, ranging from -40 ¬8C to +85 ¬8C, making it versatile for various environmental conditions. It is available in standard surface mount packaging options, including 48-ball CSP and 48-lead TSOP packages. With a minimum of 100,000 block erase cycles, this Flash Memory device is a reliable choice for applications requiring durability and performance.

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 2020-GE28F320B3BC90 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
2020-GE28F320B3BC90
Memory IC and Storage Component 2020-GE28F320B3BC90
Flash, 2MX16, 90ns, PBGA48, VFBGA-48 Product overview: GE28F320B3BC90 from Intel is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory IC Chips. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2020-GE28F320B3BC90 can be used for catalog matching and distributor lookup.

Flash, 2MX16, 90ns, PBGA48, VFBGA-48 Product overview: GE28F320B3BC90 from Intel is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory IC Chips. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2020-GE28F320B3BC90 can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - GE28F320B3BC90 - 1177110-GE28F320B3BC90 - Win Source Electronics
Laguna Hills, CA, United States
Memory - GE28F320B3BC90
1177110-GE28F320B3BC90
Memory - GE28F320B3BC90 1177110-GE28F320B3BC90
Manufacturer: Intel Win Source Part Number: 1177110-GE28F320B3BC 90 Manufacturer Homepage: www.intel.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Intel
Win Source Part Number: 1177110-GE28F320B3BC90
Manufacturer Homepage: www.intel.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now
 - GE28F320B3BC90 - Rochester Electronics
Newburyport, MA, United States
Flash, 2MX16, 90ns, PBGA48

Flash, 2MX16, 90ns, PBGA48

Supplier's Site Datasheet
Memory - GE28F320B3BC90 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 32Mbit Parallel 70 ns 48-VFBGA

FLASH Memory IC 32Mbit Parallel 70 ns 48-VFBGA

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - GE28F320B3BC90 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
GE28F320B3BC90
Integrated Circuits (ICs) - Memory - Memory GE28F320B3BC90
IC FLASH 32MBIT PARALLEL 48VFBGA

IC FLASH 32MBIT PARALLEL 48VFBGA

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 2020-GE28F320B3BC90 1177110-GE28F320B3BC90 GE28F320B3BC90 GE28F320B3BC90 GE28F320B3BC90
Product Name Memory IC and Storage Component Memory - GE28F320B3BC90 Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash Flash Flash; FLASH Flash; Non-Volatile
Access Time 90 ns 70 ns
Operating Temperature -40 C (-40 F) -40 to 85 C (-40 to 185 F)
Number of Words 2097152 k
Pins 48
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