Intel Corporation Memory - GE28F320B3BC90 GE28F320B3BC90

The GE28F320B3BC90 is a 32 Mbit Flash Memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates within a voltage range of 2.7 V to 3.6 V for read, program, and erase operations, and features a fast access time of 70 ns maximum. The device supports flexible I/O options, allowing for either 1.65 V to 1.5 V or 2.7 V to 3.6 V operation, which can help reduce overall system power consumption. This memory device is organized into optimized block sizes, including eight 8-KB blocks for data and up to 127 x 64-KB blocks for code, facilitating efficient data management. It includes features such as block locking controlled by a write protect pin, and it supports automated programming and block erase with status registers. The GE28F320B3BC90 is also designed for low power consumption, with a typical read current of 9 mA. The device is suitable for extended temperature operation, ranging from -40 ¬8C to +85 ¬8C, making it versatile for various environmental conditions. It is available in standard surface mount packaging options, including 48-ball CSP and 48-lead TSOP packages. With a minimum of 100,000 block erase cycles, this Flash Memory device is a reliable choice for applications requiring durability and performance.