The GE28F320B3BC90 is a 32 Mbit Flash Memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates within a voltage range of 2.7 V to 3.6 V for read, program, and erase operations, and features a fast access time of 70 ns maximum. The device supports flexible I/O options, allowing for either 1.65 V to 1.5 V or 2.7 V to 3.6 V operation, which can help reduce overall system power consumption. This memory device is organized into optimized block sizes, including eight 8-KB blocks for data and up to 127 x 64-KB blocks for code, facilitating efficient data management. It includes features such as block locking controlled by a write protect pin, and it supports automated programming and block erase with status registers. The GE28F320B3BC90 is also designed for low power consumption, with a typical read current of 9 mA. The device is suitable for extended temperature operation, ranging from -40 °C to +85 °C, making it versatile for various environmental conditions. It is available in standard surface mount packaging options, including 48-ball CSP and 48-lead TSOP packages. With a minimum of 100,000 block erase cycles, this Flash Memory device is a reliable choice for applications requiring durability and performance.
Manufacturer: Intel
Win Source Part Number: 1177110-GE28F320B3BC
Manufacturer Homepage: www.intel.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Flash, 2MX16, 90ns, PBGA48, VFBGA-48 Product overview: GE28F320B3BC90 from Intel is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory IC Chips. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2020-GE28F320B3BC90 can be used for catalog matching and distributor lookup.
Flash, 2MX16, 90ns, PBGA48
FLASH Memory IC 32Mbit Parallel 70 ns 48-VFBGA
IC FLASH 32MBIT PARALLEL 48VFBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1177110-GE28F320B3BC90 | 2020-GE28F320B3BC90 | GE28F320B3BC90 | GE28F320B3BC90 | GE28F320B3BC90 |
| Product Name | Memory - GE28F320B3BC90 | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | |
| Memory Category | Flash | Flash | Flash | Flash; FLASH | Flash; Non-Volatile |
| Access Time | 90 ns | 70 ns | |||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | |||
| Number of Words | 2097152 k | ||||
| Pins | 48 |
