Integrated Silicon Solution, Inc. Memory IS64WV51216EEBLL-10CT2LA3

Description
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TSOP I
Description
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TSOP I

Suppliers

Company
Product
Description
Supplier Links
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TSOP I

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TSOP I

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS64WV51216EEBLL-10CT2LA3
Integrated Circuits (ICs) - Memory - Memory IS64WV51216EEBLL-10CT2LA3
8Mb,High-Speed/Low Power,Async w

8Mb,High-Speed/Low Power,Async w

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number IS64WV51216EEBLL-10CT2LA3 IS64WV51216EEBLL-10CT2LA3
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 8000 kbits 8000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29F040 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882523 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - 71256S35DB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 256 kbits
View Details