Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS64WV51216EEBLL-10B2LA3

Description
8Mb,High-Speed/Low Power,Async w
Description
8Mb,High-Speed/Low Power,Async w

Suppliers

Company
Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS64WV51216EEBLL-10B2LA3
Integrated Circuits (ICs) - Memory - Memory IS64WV51216EEBLL-10B2LA3
8Mb,High-Speed/Low Power,Async w

8Mb,High-Speed/Low Power,Async w

Supplier's Site
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TFBGA (6x8)

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS64WV51216EEBLL-10B2LA3 IS64WV51216EEBLL-10B2LA3
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 10 ns
Density 8000 kbits 8000 kbits
Supply Voltage Surface Mount 3.6V; 2.4V ~ 3.6V
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