Integrated Silicon Solution, Inc. Memory IS64WV51216BLL-10MA3

Description
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-miniBGA (9x11)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-miniBGA (9x11)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS64WV51216BLL-10MA3-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-miniBGA (9x11)

SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-miniBGA (9x11)

Buy Now Datasheet
Memory - SRAM - IS64WV51216BLL-10MA3 - 1189367-IS64WV51216BLL-10MA3 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS64WV51216BLL-10MA3
1189367-IS64WV51216BLL-10MA3
Memory - SRAM - IS64WV51216BLL-10MA3 1189367-IS64WV51216BLL-10MA3
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 1189367-IS64WV51216B LL-10MA3 Packaging: Tray Mounting Style: SMD Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 8Mb (512K x 16) Access Time: 10ns Categories: Integrated Circuits Supplier Device Package: 48-miniBGA (9x11) Temperature Range - Operating: -40°C ~ 125°C Memory Format: SRAM Manufacturer Homepage: www.issi.com Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Manufacturer Package: 48-TFBGA Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 220 MSL Level: 2 (1 Year) Supply Voltage (V): 2.4V ~ 3.6V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189367-IS64WV51216BLL-10MA3
Packaging: Tray
Mounting Style: SMD
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 8Mb (512K x 16)
Access Time: 10ns
Categories: Integrated Circuits
Supplier Device Package: 48-miniBGA (9x11)
Temperature Range - Operating: -40°C ~ 125°C
Memory Format: SRAM
Manufacturer Homepage: www.issi.com
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Manufacturer Package: 48-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 220
MSL Level: 2 (1 Year)
Supply Voltage (V): 2.4V ~ 3.6V

Buy Now
Memory IC and Storage Component - 774-IS64WV51216BLL-10MA3 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS64WV51216BLL-10MA3
Memory IC and Storage Component 774-IS64WV51216BLL-10MA3
IC SRAM 8MBIT PARALLEL 48MINIBGA Product overview: IS64WV51216BLL-10MA3 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS64WV51216BLL-1 0MA3 can be used for catalog matching and distributor lookup.

IC SRAM 8MBIT PARALLEL 48MINIBGA Product overview: IS64WV51216BLL-10MA3 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS64WV51216BLL-10MA3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS64WV51216BLL-10MA3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-miniBGA (9x11)

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-miniBGA (9x11)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS64WV51216BLL-10MA3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS64WV51216BLL-10MA3
Integrated Circuits (ICs) - Memory - Memory IS64WV51216BLL-10MA3
IC SRAM 8MBIT PARALLEL 48MINIBGA

IC SRAM 8MBIT PARALLEL 48MINIBGA

Supplier's Site
IC SRAM 8MBIT PARALLEL 48MINIBGA

IC SRAM 8MBIT PARALLEL 48MINIBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS64WV51216BLL-10MA3-ND 1189367-IS64WV51216BLL-10MA3 774-IS64WV51216BLL-10MA3 IS64WV51216BLL-10MA3 IS64WV51216BLL-10MA3 IS64WV51216BLL-10MA3
Product Name Memory Memory - SRAM - IS64WV51216BLL-10MA3 Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 8000 kbits 8000 kbits 8000 kbits 8000 kbits
Package Type 48-TFBGA BGA; Tray BGA; 48-TFBGA BGA
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