Integrated Silicon Solution, Inc. Memory IS62WV51216HBLL-45B2LI-TR

Description
8Mb, Low Power/Power Saver,Async
Request a Quote Datasheet
Description
8Mb, Low Power/Power Saver,Async
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
8Mb, Low Power/Power Saver,Async

8Mb, Low Power/Power Saver,Async

Supplier's Site Datasheet
Memory - 706-IS62WV51216HBLL-45B2LI-TR-ND - DigiKey
Thief River Falls, MN, United States
IC SRAM 8MBIT PAR

IC SRAM 8MBIT PAR

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1356810-IS62WV51216HBLL-45B2LI-TR - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1356810-IS62WV51216HBLL-45B2LI-TR
Integrated Circuits (ICs) - Memory - Memory 1356810-IS62WV51216HBLL-45B2LI-TR
Win Source Part Number: 1356810-IS62WV51216H BLL-45B2LI-TR Category: Integrated Circuits (ICs) - Memory - Memory Package: Tape & Reel Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 60 pct. MSL Level: 3 (168 Hours) Mfr: ISSI, Integrated Silicon Solution Inc Product Status: Active Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8) Technology: SRAM - Asynchronous Mounting Type: Surface Mount HTSUS: 8542.32.0041 REACH Status: REACH Unaffected ECCN: 3A991B2A Voltage - Supply: 2.2V ~ 3.6V Memory Type: Volatile Memory Format: SRAM Memory Size: 8Mbit Memory Organization: 512K x 16 Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Access Time: 45 ns

Win Source Part Number: 1356810-IS62WV51216HBLL-45B2LI-TR
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 60 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Product Status: Active
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)
Technology: SRAM - Asynchronous
Mounting Type: Surface Mount
HTSUS: 8542.32.0041
REACH Status: REACH Unaffected
ECCN: 3A991B2A
Voltage - Supply: 2.2V ~ 3.6V
Memory Type: Volatile
Memory Format: SRAM
Memory Size: 8Mbit
Memory Organization: 512K x 16
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS62WV51216HBLL-45B2LI-TR
Integrated Circuits (ICs) - Memory - Memory IS62WV51216HBLL-45B2LI-TR
8Mb, Low Power/Power Saver,Async

8Mb, Low Power/Power Saver,Async

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS62WV51216HBLL-45B2LI-TR 706-IS62WV51216HBLL-45B2LI-TR-ND 1356810-IS62WV51216HBLL-45B2LI-TR IS62WV51216HBLL-45B2LI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM - Asynchronous SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip
Access Time 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits 8000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ626162 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Access Time 12 ns
Operating Temperature -65 to 150 C (-85 to 302 F)
View Details
Memory - 71256SA12YI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 256 kbits
View Details
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - 448-CY14V256LA-BA35XITTR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type 48-TFBGA
View Details
4 suppliers