SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 45ns 48-VFBGA (6x8)
IC SRAM 8MBIT PARALLEL 48VFBGA Product overview: IS62WV51216EBLL-45BL
IC SRAM 8MBIT PARALLEL 48VFBGA
IC SRAM 8MBIT PARALLEL 48VFBGA
IC SRAM 8MBIT PARALLEL 48VFBGA
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-VFBGA (6x8)
| DigiKey | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS62WV51216EBLL-45BLI-TR-ND | 774-IS62WV51216EBLL-45BLI-TR | IS62WV51216EBLL-45BLI-TR | IS62WV51216EBLL-45BLI-TR | IS62WV51216EBLL-45BLI-TR | IS62WV51216EBLL-45BLI-TR |
| Product Name | Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM - Asynchronous; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits |
| Package Type | 48-VFBGA | 48-VFBGA | BGA; 48-VFBGA | |||
| Supply Voltage | 2.2V ~ 3.6V | -3.3V; 2.2 | Surface Mount | 2.2V ~ 3.6V | 3.6V; 2.2V ~ 3.6V |