IC SRAM 4MBIT PARALLEL 44TSOP II Product overview: IS62WV25616BLL-55TLI
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 017883-IS62WV25616BL
Packaging: Tray
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Access Time: 55ns
Family Name: IS62WV25616BLL
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 44-TSOP II
Supply Voltage - Operating: 2.5 V to 3.6 V
Memory Format: SRAM
Alternative Parts (Cross-Reference): M68AW256MN55ND1T; M68AW256MN55ND6T; M68AW256MN55ND6; M68AW256MN55ND1;
Introduction Date: October 07, 2002
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 55ns 44-TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
STANDARD SRAM, 256KX16, 55NS, CMOS, TSOP2-44, LOW LOW POWER, IND TEMP. FREE 2 YEAR RADWELL WARRANTY
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 44-TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
SRAM, 4MBIT, 55NS, TSOP-2-44; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:2.5V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:55ns; Operating Temperature Min:-40°C; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Radwell International | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS62WV25616BLL-55TLI | 017883-IS62WV25616BLL-55TLI | 706-1047-ND | IS62WV25616BLL-55TLI | 32404004 | IS62WV25616BLL-55TLI | IS62WV25616BLL-55TLI | IS62WV25616BLL-55TLI | 43M5461 |
| Product Name | Memory IC and Storage Component | Memory - SRAM - IS62WV25616BLL-55TLI | Memory | Memory | Memory IC | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Sram, 4Mbit, 55Ns, Tsop-2-44; Memory Size Integrated Silicon Solution (Issi) |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM Chip | SRAM - Asynchronous; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM Chip |
| Access Time | 55 ns | 55 ns | 55 ns | 55 ns | 55 ns | 55 ns | |||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | |||
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | ||
| Number of Words | 256 k |