Integrated Silicon Solution, Inc. Memory IS61WV5128BLL-10BI

Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-TFBGA (6x8)
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Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-TFBGA (6x8)
Request a Quote
Datasheet
Datasheet Summary
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The IS61WV5128BLL-10BI is a high-speed, low-power CMOS static RAM with a capacity of 512K x 8 bits. It features an access time of 10 ns and operates from a single power supply voltage range of 2.4V to 3.6V. The device is designed for fully static operation, requiring no clock or refresh cycles, which simplifies integration into various applications. Typical active power consumption is 85 mW, while standby power is 7 mW, making it suitable for power-sensitive designs. This memory chip is available in a 36-ball mini BGA package, measuring 6mm x 8mm, and is rated for industrial temperature ranges from -40¬8C to +85¬8C. The IS61WV5128BLL-10BI also supports three-state outputs and is offered in lead-free options, aligning with environmental standards. Its combination of speed, low power consumption, and robust temperature support makes it a viable choice for engineers looking for reliable memory solutions in demanding applications.

Datasheet Summary
Powered by GS/AI

The IS61WV5128BLL-10BI is a high-speed, low-power CMOS static RAM with a capacity of 512K x 8 bits. It features an access time of 10 ns and operates from a single power supply voltage range of 2.4V to 3.6V. The device is designed for fully static operation, requiring no clock or refresh cycles, which simplifies integration into various applications. Typical active power consumption is 85 mW, while standby power is 7 mW, making it suitable for power-sensitive designs. This memory chip is available in a 36-ball mini BGA package, measuring 6mm x 8mm, and is rated for industrial temperature ranges from -40¬8C to +85¬8C. The IS61WV5128BLL-10BI also supports three-state outputs and is offered in lead-free options, aligning with environmental standards. Its combination of speed, low power consumption, and robust temperature support makes it a viable choice for engineers looking for reliable memory solutions in demanding applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61WV5128BLL-10BI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV5128BLL-10BI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV5128BLL-10BI
Integrated Circuits (ICs) - Memory - Memory IS61WV5128BLL-10BI
IC SRAM 4MBIT PARALLEL 36TFBGA

IC SRAM 4MBIT PARALLEL 36TFBGA

Supplier's Site
IC SRAM 4MBIT PARALLEL 36TFBGA

IC SRAM 4MBIT PARALLEL 36TFBGA

Supplier's Site Datasheet
Memory - IS61WV5128BLL-10BI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV5128BLL-10BI-ND IS61WV5128BLL-10BI IS61WV5128BLL-10BI IS61WV5128BLL-10BI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 36-TFBGA BGA BGA; 36-TFBGA
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