8Mb,High-Speed/Low Power,Async w Product overview: IS61WV51216EEBLL-10T
IC SRAM 8MBIT PAR
8Mb,High-Speed/Low Power,Async w
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 44-TSOP II
8Mb,High-Speed/Low Power,Async w
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS61WV51216EEBLL-10TLI-TR | 706-IS61WV51216EEBLL-10TLI-TR-ND | IS61WV51216EEBLL-10TLI-TR | IS61WV51216EEBLL-10TLI-TR | IS61WV51216EEBLL-10TLI-TR |
| Product Name | Low-Power 8Mb Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Access Time | 10 ns | 10 ns | 10 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits |
| Number of Words | 512 k | ||||
| Address Bus Width | 19 bits |