IC SRAM 8MBIT PAR
8Mb,High-Speed/Low Power,Async w Product overview: IS61WV51216EEBLL-10T
8Mb,High-Speed/Low Power,Async w
8Mb,High-Speed/Low Power,Async w
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 44-TSOP II
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-IS61WV51216EEBLL-10TLI-TR-ND | 774-IS61WV51216EEBLL-10TLI-TR | IS61WV51216EEBLL-10TLI-TR | IS61WV51216EEBLL-10TLI-TR | IS61WV51216EEBLL-10TLI-TR |
| Product Name | Memory | Low-Power 8Mb Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | SRAM - Asynchronous | Volatile; SRAM Chip | SRAM; SRAM Chip | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits |
| Package Type | TSOP; "44-TSOP (0.400"", 10.16mm Width)" | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP (0.400\", 10.16mm Width) | ||
| Supply Voltage | 2.4V ~ 3.6V | -3.3V; 2.4 | 2.4V ~ 3.6V | Surface Mount | 3.6V; 2.4V ~ 3.6V |