Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS61WV51216EEALL-20BLI-TR

Description
8Mb,High-Speed/Low Power,Async w
Datasheet
Description
8Mb,High-Speed/Low Power,Async w
Datasheet

Suppliers

Company
Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV51216EEALL-20BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV51216EEALL-20BLI-TR
8Mb,High-Speed/Low Power,Async w

8Mb,High-Speed/Low Power,Async w

Supplier's Site
SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-miniBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-miniBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS61WV51216EEALL-20BLI-TR IS61WV51216EEALL-20BLI-TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 20 ns
Density 8000 kbits 8000 kbits
Supply Voltage Surface Mount 1.65V ~ 2.2V
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