Integrated Silicon Solution, Inc. Memory IS61WV51216EEALL-20BLI-TR

Description
SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-miniBGA (6x8)
Datasheet
Description
SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-miniBGA (6x8)
Datasheet

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SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-miniBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-miniBGA (6x8)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV51216EEALL-20BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV51216EEALL-20BLI-TR
8Mb,High-Speed/Low Power,Async w

8Mb,High-Speed/Low Power,Async w

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Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number IS61WV51216EEALL-20BLI-TR IS61WV51216EEALL-20BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits
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