Integrated Silicon Solution, Inc. Memory - SRAM - IS61WV51216EDBLL-10TLI IS61WV51216EDBLL-10TLI

Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 083331-IS61WV51216ED BLL-10TLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 8Mb (512K x 16) Access Time: 10ns Family Name: IS61WV51216EDBLL Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 44-TSOP2 (10.2x18.4) Supply Voltage - Operating: 2.4 V to 3.6 V Memory Format: SRAM Alternative Parts (Cross-Reference): CY7C1051DV33-10ZSXI; CY7C1051DV33-10ZSXIT ; HM216514TTI5SE; BS616LV8017EIG70; Introduction Date: May 31, 2012 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
  • Memory - SRAM - IS61WV51216EDBLL-10TLI - 083331-IS61WV51216EDBLL-10TLI - Win Source Electronics
    Win Source Electronics
  • Memory - 706-1503-ND - DigiKey
    DigiKey
  • Memory IC and Storage Component - 774-IS61WV51216EDBLL-10TLI - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - IS61WV51216EDBLL-10TLI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS61WV51216EDBLL-10TLI - Lingto Electronic Limited
    Lingto Electronic Limited
  • Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi) - 29X5489 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi) - 65AC6037 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Integrated Circuits (ICs) - Memory - Memory - IS61WV51216EDBLL-10TLI - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - IS61WV51216EDBLL-10TLI - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 083331-IS61WV51216ED BLL-10TLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 8Mb (512K x 16) Access Time: 10ns Family Name: IS61WV51216EDBLL Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 44-TSOP2 (10.2x18.4) Supply Voltage - Operating: 2.4 V to 3.6 V Memory Format: SRAM Alternative Parts (Cross-Reference): CY7C1051DV33-10ZSXI; CY7C1051DV33-10ZSXIT ; HM216514TTI5SE; BS616LV8017EIG70; Introduction Date: May 31, 2012 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SRAM - IS61WV51216EDBLL-10TLI - 083331-IS61WV51216EDBLL-10TLI - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS61WV51216EDBLL-10TLI
083331-IS61WV51216EDBLL-10TLI
Memory - SRAM - IS61WV51216EDBLL-10TLI 083331-IS61WV51216EDBLL-10TLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 083331-IS61WV51216ED BLL-10TLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 8Mb (512K x 16) Access Time: 10ns Family Name: IS61WV51216EDBLL Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 44-TSOP2 (10.2x18.4) Supply Voltage - Operating: 2.4 V to 3.6 V Memory Format: SRAM Alternative Parts (Cross-Reference): CY7C1051DV33-10ZSXI; CY7C1051DV33-10ZSXIT ; HM216514TTI5SE; BS616LV8017EIG70; Introduction Date: May 31, 2012 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 083331-IS61WV51216EDBLL-10TLI
Packaging: Tray
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 8Mb (512K x 16)
Access Time: 10ns
Family Name: IS61WV51216EDBLL
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 44-TSOP2 (10.2x18.4)
Supply Voltage - Operating: 2.4 V to 3.6 V
Memory Format: SRAM
Alternative Parts (Cross-Reference): CY7C1051DV33-10ZSXI; CY7C1051DV33-10ZSXIT; HM216514TTI5SE; BS616LV8017EIG70;
Introduction Date: May 31, 2012
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory - 706-1503-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
706-1503-ND
Memory 706-1503-ND
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 44-TSOP II

SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 44-TSOP II

Buy Now Datasheet
Memory IC and Storage Component - 774-IS61WV51216EDBLL-10TLI - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-IS61WV51216EDBLL-10TLI
Memory IC and Storage Component 774-IS61WV51216EDBLL-10TLI
IC SRAM 8MBIT PARALLEL 44TSOP II Product overview: IS61WV51216EDBLL-10T LI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61WV51216EDBLL -10TLI can be used for catalog matching and distributor lookup.

IC SRAM 8MBIT PARALLEL 44TSOP II Product overview: IS61WV51216EDBLL-10TLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61WV51216EDBLL-10TLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS61WV51216EDBLL-10TLI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS61WV51216EDBLL-10TLI
Memory IS61WV51216EDBLL-10TLI
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet
Memory - IS61WV51216EDBLL-10TLI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS61WV51216EDBLL-10TLI
Memory IS61WV51216EDBLL-10TLI
IC SRAM 8MBIT PARALLEL 44TSOP II

IC SRAM 8MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet
Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi) - 29X5489 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi)
29X5489
Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi) 29X5489
SRAM, 8MBIT, 10NS, TSOP-II-44; Memory Size:8Mbit; SRAM Memory Configuration:512K x 16bit; Supply Voltage Range:2.4V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; MSL:- RoHS Compliant: Yes

SRAM, 8MBIT, 10NS, TSOP-II-44; Memory Size:8Mbit; SRAM Memory Configuration:512K x 16bit; Supply Voltage Range:2.4V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; MSL:- RoHS Compliant: Yes

Supplier's Site
Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi) - 65AC6037 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi)
65AC6037
Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi) 65AC6037
SRAM, 8MBIT, 10NS, TSOP-II-44; Memory Size:8Mbit; SRAM Memory Configuration:512K x 16bit; Supply Voltage Range:2.4V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes

SRAM, 8MBIT, 10NS, TSOP-II-44; Memory Size:8Mbit; SRAM Memory Configuration:512K x 16bit; Supply Voltage Range:2.4V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV51216EDBLL-10TLI - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV51216EDBLL-10TLI
Integrated Circuits (ICs) - Memory - Memory IS61WV51216EDBLL-10TLI
IC SRAM 8MBIT PARALLEL 44TSOP II

IC SRAM 8MBIT PARALLEL 44TSOP II

Supplier's Site
Memory - IS61WV51216EDBLL-10TLI - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
IS61WV51216EDBLL-10TLI
Memory IS61WV51216EDBLL-10TLI
IC SRAM 8MBIT PARALLEL 44TSOP II

IC SRAM 8MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 083331-IS61WV51216EDBLL-10TLI 706-1503-ND 774-IS61WV51216EDBLL-10TLI IS61WV51216EDBLL-10TLI IS61WV51216EDBLL-10TLI 29X5489 IS61WV51216EDBLL-10TLI IS61WV51216EDBLL-10TLI
Product Name Memory - SRAM - IS61WV51216EDBLL-10TLI Memory Memory IC and Storage Component Memory Memory Sram, 8Mbit, 10Ns, Tsop-Ii-44; Memory Size Integrated Silicon Solution (Issi) Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM - Asynchronous; SRAM Chip
Access Time 10 ns 10 ns 10 ns 10 ns 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F)
Package Type SOP; 44-TSOP2 (10.2x18.4) TSOP; "44-TSOP (0.400"", 10.16mm Width)" 44-TSOP (0.400\", 10.16mm Width) TSOP-II 44-TSOP (0.400", 10.16mm Width)
Supply Voltage 2.4 V ~ 3.6 V 2.4V ~ 3.6V -3.3V; 2.4 3.6V; 2.4V ~ 3.6V Surface Mount 2.4V ~ 3.6V
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