Integrated Silicon Solution, Inc. Memory IS61WV51216EDALL-20BLI

Description
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61WV51216EDALL-20BLI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)

Buy Now Datasheet
SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 8MBIT PARALLEL 48TFBGA

IC SRAM 8MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV51216EDALL-20BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV51216EDALL-20BLI
Integrated Circuits (ICs) - Memory - Memory IS61WV51216EDALL-20BLI
IC SRAM 8MBIT PARALLEL 48TFBGA

IC SRAM 8MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV51216EDALL-20BLI-ND IS61WV51216EDALL-20BLI IS61WV51216EDALL-20BLI IS61WV51216EDALL-20BLI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits 8000 kbits 8000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
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