Integrated Silicon Solution, Inc. Memory IS61WV51216EDALL-20BLI-TR

Description
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61WV51216EDALL-20BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV51216EDALL-20BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV51216EDALL-20BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV51216EDALL-20BLI-TR
IC SRAM 8MBIT PARALLEL 48TFBGA

IC SRAM 8MBIT PARALLEL 48TFBGA

Supplier's Site
IC SRAM 8MBIT PARALLEL 48TFBGA

IC SRAM 8MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 20 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV51216EDALL-20BLI-TR-ND IS61WV51216EDALL-20BLI-TR IS61WV51216EDALL-20BLI-TR IS61WV51216EDALL-20BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits 8000 kbits 8000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
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