The IS61WV3216BLL-12TLI-TR is a high-speed CMOS static RAM with a capacity of 524,288 bits, organized as 32,768 words by 16 bits. It features an access time of 12 ns at 3.3V and 15 ns at a voltage range of 2.5V to 3.6V, making it suitable for applications requiring fast data retrieval. The device operates with low power consumption, typically 50 mW during operation and 25 µW in standby mode, which is beneficial for energy-sensitive designs. This SRAM supports a fully static operation, eliminating the need for a clock or refresh cycles, and includes three-state outputs for flexible data handling. It is compatible with TTL interface levels and allows for easy memory expansion through Chip Enable (CE) and Output Enable (OE) inputs. The device is available in both automotive and commercial temperature ranges, with options for lead-free packaging. The IS61WV3216BLL-12TLI-TR is packaged in a JEDEC standard 44-pin TSOP-II or a 48-pin mini BGA, providing versatility in integration into various systems. This product is ideal for engineers looking for reliable, high-speed memory solutions in their designs.
IC SRAM 512KBIT PAR 44TSOP II
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 777223-IS61WV3216BLL
Packaging: Reel package
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 44-TSOP (0.400", 10.16mm Width)
Mounting: SMD
Technology: SRAM - Asynchronous
Operating Supply Voltage: 3 V ~ 3.6 V
Memory Type: Volatile
Memory Size: 512Kb (32K x 16)
Access Time: 12ns
Family Name: IS61WV3216BLL
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Manufacturer Package: 44-TSOP II
Alternative Parts (Cross-Reference): CY7C1020CV33-15ZIT; CY7C1020CV33-12ZCT; CY7C1020V33-12ZCT; CY7C1020V33-10ZC;
Introduction Date: November 02, 2005
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
IC SRAM 512KBIT PAR 44TSOP II Product overview: IS61WV3216BLL-12TLI-
SRAM - Asynchronous Memory IC 512Kb (32K x 16) Parallel 12ns 44-TSOP II
IC SRAM 512KBIT PAR 44TSOP II
SRAM - Asynchronous Memory IC 512Kbit Parallel 12 ns 44-TSOP II
IC SRAM 512KBIT PAR 44TSOP II
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61WV3216BLL-12TLI-TR | 777223-IS61WV3216BLL-12TLI-TR | 774-IS61WV3216BLL-12TLI-TR | IS61WV3216BLL-12TLI-TR-ND | IS61WV3216BLL-12TLI-TR | IS61WV3216BLL-12TLI-TR | IS61WV3216BLL-12TLI-TR |
| Product Name | Memory | Memory - SRAM - IS61WV3216BLL-12TLI-TR | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM - Asynchronous; SRAM Chip | Volatile; SRAM Chip | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 12 ns | 12 ns | 12 ns | 12 ns | 12 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512 kbits | 512 kbits | 512 kbits | 512 kbits | 512 kbits | ||
| Package Type | 44-TSOP (0.400", 10.16mm Width) | TSOP; "44-TSOP (0.400"", 10.16mm Width)" | 44-TSOP (0.400\", 10.16mm Width) |
